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| inchange semiconductor isc product specification isc silicon npn power transistor BU1507DX description collector-emitter sustaining voltage- : v ceo(sus) = 700v(min.) high speed switching built-in damper diode applications designed for use in horizontal def lection circuits of color tv receivers and computer monitors. absolute maximum ratings (t a =25 ) symbol parameter value unit v cesm collector-emitter voltage v be = 0 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7.5 v i c collector current-continuous 8 a i cm collector current-peak 15 a i b b base current-continuous 4 a i bm base current-peak 6 a p c collector power dissipation @t c =25 35 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.7 /w isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU1507DX electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0; l= 25mh 700 v v (br)ebo emitter-base breakdown voltage i e = 600ma; i c = 0 7.5 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 0.8a b 5.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 0.8a b 1.1 v i ces collector cutoff current v ce = v cesm ; v be = 0 v ce = v cesm ; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 7.5v; i c = 0 160 ma h fe-1 dc current gain i c = 1a; v ce = 5v 14 h fe-2 dc current gain i c = 4a; v ce = 5v 5 9 v ecf c-e diode forward voltage i f = 4a 2.0 v c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 68 pf switching times resistive load t s storage time 6.0 s t f fall time i c = 4a; i b( end ) = 0.7a; l b = 6 h; -v bb = 4v 0.5 s isc website www.iscsemi.cn www.iscsemi.cn |
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